Intrinsic domain-wall resistance in ferromagnetic semiconductors.
نویسندگان
چکیده
Transport through zinc blende magnetic semiconductors with magnetic domain walls is studied theoretically. We show that these magnetic domain walls have an intrinsic resistance due to the effective hole spin-orbit interaction. The intrinsic resistance is independent of the domain-wall shape and width and survives the adiabatic limit. For typical parameters, the intrinsic domain-wall resistance is comparable to the Sharvin resistance and should be experimentally measurable.
منابع مشابه
Measurements of nanoscale domain wall flexing in a ferromagnetic thin film.
We use the high spatial sensitivity of the anomalous Hall effect in the ferromagnetic semiconductor Ga(1-x)Mn(x)As, combined with the magneto-optical Kerr effect, to probe the nanoscale elastic flexing behavior of a single magnetic domain wall in a ferromagnetic thin film. Our technique allows position sensitive characterization of the pinning site density, which we estimate to be ∼10(14) cm(-3...
متن کاملمشخصات پیوندگاههای ابررسانا - فرومغناطیس - ابررسانا با پایانههای ابررسانای یکتایی
We study numerically the electronic heat capacity, spin and charge current in a diffusive Superconductor-Ferromagnetic-Superconductor systems، with singlet superconducting leads and non-uniform ferromagnetic layer. Specially, we focus on ferromagnetic layer with domain wall and conical structures incorporation the spin-active interfaces. We investigate, how the 0-π transition is influenced by n...
متن کاملDomain Wall Engineering of Nanoscale Ferromagnetic
Title of Dissertation: Domain Wall Engineering of Nanoscale Ferromagnetic Elements and its Application for Memory Devices Sylvia H. Flórez, Doctor of Philosophy, 2006 Dissertation directed by: Professor R.D. Gomez Department of Electrical and Computer Engineering This thesis concerns the interaction of spin polarized electrons with the local magnetic moments in nanopatterned metallic systems. W...
متن کاملQuantum Interference Control of Ballistic Magneto- resistance in a Magnetic Nanowire Containing Two Atomic- Size Domain Walls
The magnetoresistance of a one-dimensional electron gas in a metallic ferromagnetic nanowire containing two atomic-size domain walls has been investigated in the presence of spin-orbit interaction. The magnetoresistance is calculated in the ballistic regime, within the Landauer-Büttiker formalism. It has been demonstrated that the conductance of a magnetic nanowire with double domain walls...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
- Physical review letters
دوره 97 13 شماره
صفحات -
تاریخ انتشار 2006